features ? low on-state resistance ? fast switching ? low gate charge & low c rss ? fully characterized avalanche voltage and current ? specially desigened for ac adapter, battery charger and smps ? in compliance with eu rohs 2002/95/ec directives mechanical information ? case: to-220ab / ito-220ab molded plastic ? terminals : solderable per mil-std-750,method 2026 marking & ordering information type marking package packing hy7n80t 7n80t to-220ab 50pcs/tube HY7N80FT 7n80ft ito-220ab 50pcs/tube absolute maximum ratings (t c =25c unless otherwise specified ) units v v t c =25 a a t c =25 w mj thermal characteristics units v v company reserves the right to improve product design hy7n80t HY7N80FT drain-source voltage v ds 800 800v / 7a n-channel enhancement mode mosfet parameter symbol gate-source voltage v gs i d 7 7 continuous drain current + 30 pulsed drain current 1) i dm 28 28 p d 147 1.23 50 0.4 maximum power dissipation derating factor avalanche energy with single pulse i as =7a, v dd =123v, l=18.5mh e as operating junction and storage temperature range t j, t stg -55 to +150 450 note : 1. maximum dc current limited by the package parameter symbol hy7n80t HY7N80FT junction-to-case thermal resistance r q jc junction-to-case thermal resistance r q ja hy7n80t / HY7N80FT 0.85 2.5 62.5 100 800v, r ds(on) =1.65 w @v gs =10v, i d =3.5a fig. 1 C forward current derating curve ambient temperature ( ) 25 50 75 100 125 150 175 single phase half wave 60hz fig. 2 C maximum non - 1 2 5 10 single 1 4 10 20 100 t 0 0.2 0.4 0.6 0.0 rev 1.0, 25 - sept - 2012 page.1 drain 1 source 2 gate 3 to - 220ab ito - 220ab 1 2 3 1 2 3
symbol min. typ. max. units bv dss 800 - - v v gs(th) 2 - 4 v r ds(on) - 1.39 1.65 w i dss - - 1 ua i gss - - + 100 na qg - 26.8 - qgs - 7.6 - qgd - 8.3 - t d(on) - 28.2 36.8 t r - 72.8 88 t d(off) - 68.4 82.6 t f - 32 38.4 c iss - 1150 - c oss - 120 - c rss - 6.5 - i s - - 7 a i sm - - 28 a v sd - - 1.4 v t rr - 195 - ns q rr - 0.62 - uc note : pulse test : pulse width Q 300us, duty cycle Q 2% reverse recovery charge zero gate voltage drain current gate body leakage current v dd =400v i d =7a v gs =10v r g =25 w v ds =25v v gs =0v f=1.0m hz source-drain diode v gs =0v i s =7a di/dt=100a/us - - i s =7a v gs =0v ns max. pulsed source current diode forward voltage reverse recovery time turn-off delay time turn-off fall time input capacitance output capacitance static v gs =0v i d =250ua v ds =v gs i d =250ua v gs =10v i d =3.5a v ds =800v v gs =0v v gs = + 30v v ds =0v reverse transfer capacitance max. diode forwad voltage gate-drain charge dynamic v ds =640v i d =7a v gs =10v nc turn-on delay time turn-on rise time pf hy7n80t / HY7N80FT electrical characteristics ( t c =25 test condition paramter drain-source breakdown voltage gate threshold voltage drain-source on-state resistance total gate charge gate-source charge rev 1.0, 25 - sept - 2012 page.2
hy7n80t / HY7N80FT typical characteristics curves ( t c =25 , unless otherwise noted) 0 2 4 6 8 10 12 14 0 10 20 30 40 50 i d - drain - to - source current (a) v ds - drain - to - source voltage (v) 6.0v v gs = 20v~ 8.0v 5.0v 7.0v 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 r ds(on) - on resistance( w ) i d - drain current (a) v gs = 20v v gs =10v 0 400 800 1200 1600 2000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain - to - source voltage (v) ciss f = 1mhz v gs = 0v crss coss 0 2 4 6 8 4 5 6 7 8 9 10 r ds(on) - on resistance( w ) v gs - gate - to - source voltage (v) i d =3.5a 0.1 1 10 1 2 3 4 5 6 7 8 9 i d - drain source current (a) v gs - gate - to - source voltage (v) v ds =50v t j = 125 o c 25 o c - 55 o c fig.1 output characteristric 0 2 4 6 8 10 12 0 4 8 12 16 20 24 28 v gs - gate - to - source voltage (v) q g - gate charge (nc) i d =7a v ds =520v v ds =325v v ds =130v fig.2 transfer characteristric fig.3 on - resistance vs drain current fig.4 on - resistance vs gate to source voltage fig.5 capacitance characteristic fig.6 gate charge characteristic rev 1.0, 25 - sept - 2012 page.3
hy7n80t / HY7N80FT typical characteristics curves ( t c =25 , unless otherwise noted) 0.8 0.9 1 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 bv dss - breakdown voltage (normalized) t j - junction temperature ( o c) i d = 250 m a 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - to - drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on - resistance (normalized) t j - junction temperature ( o c) v gs =10 v i d =3.5a fig.7 on - resistance vs junction temperature fig.8 breakdown voltage vs junction temperature fig.9 body diode forward voltage characteristic rev 1.0, 25 - sept - 2012 page.4
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